PI power devices integrate a high-voltage switch and provide internal isolation. This enables the design of compact power supplies that meet safety requirements of demanding applications like EVs.
This is the AEC-Q100 qualification report for InnoSwitch3-AQ switcher ICs INN3947CQ & INN3949CQ
This is the AEC-Q100 qualification report for LinkSwitch-TN2Q switcher IC LNK3206GQ.
This is the AEC-Q100 qualification report for LinkSwitch-TN2Q switcher IC LNK3209GQ.
The efficiency and size benefits of SiC devices have been enthusiastically embraced by designers of industrial, automotive, traction systems and photovoltaic power conversion. To provide more detail, the lower sheet resistance of wide-bandgap SiC materials (typically 1/100th that of conventional silicon) results in smaller devices for a given current capacity—valuable
This is the AEC-Q101 Qualification Report for Qspeed diode QH12TZ600Q .
This is the AEC-Q101 Qualification Report for Qspeed diodes LQ10N200CQ and LQ20N200CQ.
PI's industry-first 1250 V GaN-based switcher ICs allow significant transient overvoltage capability, which is crucial to EV and industrial applications that require high voltage and high reliability.
This is the AEC-Q100 qualification report for SCALE-iDriver gate driver ICs: SIC1132KQ, SIC1152KQ, SIC1181KQ, SIC1182KQ.
This is the AEC-Q100 qualification report for SCALE-iDriver gate driver IC: SID1182KQ.
