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Product
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Data Sheet
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IGBT Voltage Class
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Gate Peak Current (Max)
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Max Switching Frequency
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Supported Module Type
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Logic Input Voltage
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Protection Features
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Technology
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Interface Type
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Supported Topologies
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Supply Voltage (Typ)
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Isolation Type
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Isolation Technology
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Time - Output Fall
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Time - Output Rise
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Driving Mode
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Main/Peripheral
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Paralleling Support?
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Data Sheet
View Data Sheet
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IGBT Voltage Class
1200 V
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Gate Peak Current (Max)
+5 A
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Max Switching Frequency
75.0 kHz
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Supported Module Type
IGBT, N-Channel MOSFET
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Logic Input Voltage
5
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Protection Features
Basic Active Clamping, Adv Soft Shutdown, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
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Technology
SCALE-iDriver
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Interface Type
Electrical
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Supported Topologies
2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
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Supply Voltage (Typ)
5 V
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Isolation Type
Reinforced
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Isolation Technology
Fluxlink
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Time - Output Fall
14 ns
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Time - Output Rise
29 ns
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Driving Mode
Direct-Independent
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Main/Peripheral
N/A
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Paralleling Support?
No
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Product Details
The SID1102K is a single-channel IGBT and MOSFET gate driver in an eSOP wide body package. Reinforced galvanic isolation is provided by Power Integrations’ innovative solid insulator FluxLink™ technology. Up to 5 A peak output drive current enables the product to drive devices with nominal currents of up to 300 A. Booster stages are available for gate driver requirements that exceed 5 A, AUXGL and AUXGH output pins drive external N-Channel MOSFETs up to 60 A.
Controller (PWM) signals are compatible with 5 V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider. The secondary side voltage management provides bipolar gate driver voltage from +15 to -10 V while only a +25 V unipolar voltage is required. The +15 V gate drive voltage is regulated by the chip internal Vee voltage regulator. An undervoltage log out turns off the gate signal and keeps the IGBT or MOSFET in a safe operation.
- IGBT gate driver with wide flexible use to drive IGBT modules up to 1200 V and IGBT current 50 A up to 3600 A.
- Single channel providing up to 5 A peak gate drive current without boosters
- Auxiliary outputs for external high and lowside n-channel booster stage for increased peak drive current up to 60A
- Undervoltage log out
- Integrated FluxLink technology providing safe isolation between primary-side and secondary-side
- Rail-to-rail stabilized output voltage
- Unipolar supply voltage for secondary-side
- Suitable for 600 V / 650 V / 1200 V IGBT and MOSFET switches
- Up to 75 kHz switching frequency
- Propagation delay jitter ±5 ns
- -40 °C to 125 °C operating ambient temperature
- High common-mode transient immunity
- eSOP package with 9.5 mm creepage and clearance
