SIC118xKQ
Single Channel SiC MOSFET and IGBT Gate Driver with Advanced Active Clamping and Reinforced Isolation for Automotive Applications
Applications
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Product
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Data Sheet
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IGBT Voltage Class
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Max Switching Frequency
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Gate Peak Current (Max)
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Supported Module Type
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Logic Input Voltage
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Protection Features
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Technology
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Interface Type
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Supported Topologies
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Supply Voltage (Typ)
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Isolation Type
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Isolation Technology
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Time - Output Fall
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Time - Output Rise
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Driving Mode
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Data Sheet
View Data Sheet
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IGBT Voltage Class
750 V
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Max Switching Frequency
150.0 kHz
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Gate Peak Current (Max)
+8 A
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Supported Module Type
IGBT, Silicon Carbide
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Logic Input Voltage
5
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Protection Features
Adv Active Clamping, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
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Technology
SCALE-iDriver
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Interface Type
Electrical
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Supported Topologies
2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
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Supply Voltage (Typ)
5 V
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Isolation Type
Reinforced
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Isolation Technology
Fluxlink
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Time - Output Fall
18 ns
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Time - Output Rise
22 ns
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Driving Mode
Direct-Independent
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Data Sheet
View Data Sheet
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IGBT Voltage Class
1200 V
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Max Switching Frequency
150.0 kHz
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Gate Peak Current (Max)
+8 A
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Supported Module Type
IGBT, Silicon Carbide
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Logic Input Voltage
5
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Protection Features
Adv Active Clamping, Dynamic Adv Active Clamping, Short Circuit, UVLO(Sec-side), UVLO(Pri-side)
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Technology
SCALE-iDriver
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Interface Type
Electrical
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Supported Topologies
2-level Voltage Source, 3-level NP-Clamped - Type 1, 3-level NP-Clamped - Type 2, Multi-Level NP-Clamped
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Supply Voltage (Typ)
5 V
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Isolation Type
Reinforced
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Isolation Technology
Fluxlink
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Time - Output Fall
18 ns
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Time - Output Rise
22 ns
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Driving Mode
Direct-Independent
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Product Details
SIC1181KQ and SIC1182KQ are single channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 / 800 A (typical).
Additional features such as undervoltage lock-out (UVLO) for primary-side and secondary-side, and rail-to-rail output with temperature and process compensated output impedance, guarantee safe operation even in harsh conditions.
SIC118xKQ also features short-circuit protection (at and during turn-on phase), and overvoltage limitation through Advanced Active Clamping (at turn-off phase) via a single sensing pin. For SIC MOSFETs with a current-sense terminal, adjustable over-current detection can be realized.
Highly Integrated, Compact Footprint
- ±8 A peak gate output current
- Integrated FluxLink™ technology provides reinforced isolation
- SiC MOSFET optimized Advanced Active Clamping
- Ultrafast short-circuit detection
- UVLO primary and secondary side
- Rail-to-rail stabilized output voltage
- Unipolar supply voltage for secondary-side
- Up to 150 kHz switching frequency
- Propagation delay jitter ±5 ns
- -40 °C to +125 °C operating ambient temperature
- High common-mode transient immunity
- eSOP package with 9.5 mm creepage and clearance, CTI 600
Protection / Safety Features
- Undervoltage lock-out protection for primary and secondary-side, including fault feedback
- Over-current detection for SiC MOSFETs with a current-sense terminal
- Ultrafast short-circuit monitoring, turn-off and reporting
- Advanced Active Clamping (AAC) provides overvoltage limitation during SiC MOSFET turn-off
Full Safety and Regulatory Compliance
- 100% production partial discharge test
- 100% production HIPOT compliance testing at 8000 V peak for 1 s
- Reinforced insulation pending VDE V 0884-11 certification
- UL 1577 recognized
- AEC Q-100 qualified for automotive grade level 1
Green Package
- Halogen free and RoHS compliant
Applications
- Electric vehicle BEV traction drives
- Hybrid electric vehicle PHEV traction drives
- Electric vehicle on-board and off-board chargers
