SCALE-2 Driver Cores

Power Integrations' Gate Driver cores provide a highly flexible solution by including all commonly-required driver functions - including galvanic isolation, protection, DC/DC converter etc. Driver cores for IGBTs are available with blocking voltage capabilities from 600V to 6500V and from 1W to 20W per channel. They are also suitable for driving power MOSFETs and devices based on new materials (SiC) operating at switching frequencies up to 500 kHz.

Products
Product	Description	Max Breakdown Voltage	Power Switch
2SC0115T Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD	Description Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD	Max Breakdown Voltage 1200 V	Power Switch IGBT, SiC MOSFET
1SC0450 Single-Channel SCALE-2 Driver Core 1SC0450V and 1SC0450E, highest integration level, flexible 4.5 kV and 6.5 kV gate drives with integrated DC/DC converter and fiber optic link	Description Single-Channel SCALE-2 Driver Core 1SC0450V and 1SC0450E, highest integration level, flexible 4.5 kV and 6.5 kV gate drives with integrated DC/DC converter and fiber optic link	Max Breakdown Voltage 4500 V, 6500 V	Power Switch IGBT
2SC0106T Dual-channel SCALE-2+ driver core, highest integration level for inverter designs from 37 to 110 kVA, integrated short-circuit soft shutdown function	Description Dual-channel SCALE-2+ driver core, highest integration level for inverter designs from 37 to 110 kVA, integrated short-circuit soft shutdown function	Max Breakdown Voltage 1200 V	Power Switch IGBT
2SD300C17 Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power	Description Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power	Max Breakdown Voltage 1700 V	Power Switch IGBT
2SC0535T Dual-Channel SCALE-2 Driver Core for 3.3 kV IGBTs, highest intergration level, compact, high-voltage, high-power, 35 A gate current and 2 x 5 W output power	Description Dual-Channel SCALE-2 Driver Core for 3.3 kV IGBTs, highest intergration level, compact, high-voltage, high-power, 35 A gate current and 2 x 5 W output power	Max Breakdown Voltage 3300 V	Power Switch IGBT, SiC MOSFET
2SC0650P Dual-channel SCALE-2 driver core with Planar transformers, highest integration level, highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power	Description Dual-channel SCALE-2 driver core with Planar transformers, highest integration level, highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power	Max Breakdown Voltage 1700 V	Power Switch IGBT, SiC MOSFET
2SC0435T Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power	Description Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power	Max Breakdown Voltage 1700 V	Power Switch IGBT, SiC MOSFET
2SC0108T Dual-channel SCALE-2+ driver core, highest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power	Description Dual-channel SCALE-2+ driver core, highest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power	Max Breakdown Voltage 1700 V	Power Switch IGBT
1SC2060P Single-channel SCALE-2 driver core with Planar transformers, 60 A gate current for driving large IGBT modules in parallel, 20 W output power for high-frequency applications up to 500 kHz	Description Single-channel SCALE-2 driver core with Planar transformers, 60 A gate current for driving large IGBT modules in parallel, 20 W output power for high-frequency applications up to 500 kHz	Max Breakdown Voltage 1700 V	Power Switch IGBT, SiC MOSFET

Product

Description

Max Breakdown Voltage

Power Switch

2SC0115T

Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD

Description

Smallest IGBT gate-driver for 90 kW-500 kW inverters, SCALE-2+ Technology, galvanic solution for 1200 V IGBT drivers, advanced active clamping or SSD

Max Breakdown Voltage 1200 V

Power Switch IGBT, SiC MOSFET

1SC0450

Single-Channel SCALE-2 Driver Core 1SC0450V and 1SC0450E, highest integration level, flexible 4.5 kV and 6.5 kV gate drives with integrated DC/DC converter and fiber optic link

Description

Single-Channel SCALE-2 Driver Core 1SC0450V and 1SC0450E, highest integration level, flexible 4.5 kV and 6.5 kV gate drives with integrated DC/DC converter and fiber optic link

Max Breakdown Voltage 4500 V, 6500 V

Power Switch IGBT

2SC0106T

Dual-channel SCALE-2+ driver core, highest integration level for inverter designs from 37 to 110 kVA, integrated short-circuit soft shutdown function

Description

Dual-channel SCALE-2+ driver core, highest integration level for inverter designs from 37 to 110 kVA, integrated short-circuit soft shutdown function

Max Breakdown Voltage 1200 V

Power Switch IGBT

2SD300C17

Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power

Description

Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon™ 2ED300C17-S, 30 A gate current and 2 x 4 W drive power

Max Breakdown Voltage 1700 V

Power Switch IGBT

2SC0535T

Dual-Channel SCALE-2 Driver Core for 3.3 kV IGBTs, highest intergration level, compact, high-voltage, high-power, 35 A gate current and 2 x 5 W output power

Description

Dual-Channel SCALE-2 Driver Core for 3.3 kV IGBTs, highest intergration level, compact, high-voltage, high-power, 35 A gate current and 2 x 5 W output power

Max Breakdown Voltage 3300 V

Power Switch IGBT, SiC MOSFET

2SC0650P

Dual-channel SCALE-2 driver core with Planar transformers, highest integration level, highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power

Description

Dual-channel SCALE-2 driver core with Planar transformers, highest integration level, highest power density for high-power and high-frequency, 50 A gate current and 2 x 6 W output power

Max Breakdown Voltage 1700 V

Power Switch IGBT, SiC MOSFET

2SC0435T

Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power

Description

Dual-channel SCALE-2+ driver core used by new 2SC0435T2F1-17, 2SC0435T2G1-17, 2SC0435T2H0-17, highest integration level, ultra-compact, high-quality 35 A gate current, and 2 x 4 W output power

Max Breakdown Voltage 1700 V

Power Switch IGBT, SiC MOSFET

2SC0108T

Dual-channel SCALE-2+ driver core, highest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power

Description

Dual-channel SCALE-2+ driver core, highest integration level ultra-compact, high-quality 8A gate current and 2 x 1 W output power

Max Breakdown Voltage 1700 V

Power Switch IGBT

1SC2060P

Single-channel SCALE-2 driver core with Planar transformers, 60 A gate current for driving large IGBT modules in parallel, 20 W output power for high-frequency applications up to 500 kHz

Description

Single-channel SCALE-2 driver core with Planar transformers, 60 A gate current for driving large IGBT modules in parallel, 20 W output power for high-frequency applications up to 500 kHz

Max Breakdown Voltage 1700 V

Power Switch IGBT, SiC MOSFET