Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications

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Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications.

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PI's industry-first 1250 V GaN-based switcher ICs allow significant transient overvoltage capability, which is crucial to EV and industrial applications that require high voltage and high reliability.