This gate driver board, featuring a SIC1182KQ SCALE-iDriver IC, is intended for driving two power devices (SiC-MOSFET or IGBT) in a half-bridge configuration, each with a blocking voltage up to 1200 V and device package of TO-247-4L.

This document provides a detailed report on the results of tests performed on RDHP-2301Q as a gate driver board for On Semi’s NVH4L020N120SC1 SiC MOSFET.

• Designed for 800 VDC BEV automotive applications
• Low component count design
• Reinforced isolation between high and low voltage domains (IEC-60664-1 and IEC-60664-4 compliant)
• Uses automotive qualified AEC-Q surface mount (SMD) components