Burn-In for Gate Drivers
Burn-in is a process of running a power supply through electronic components at an elevated temperature to detect failure.
Burn-in is a process of running a power supply through electronic components at an elevated temperature to detect failure.
Conformal Coating is a process of applying a thin polymeric film which "conforms" to the contours of a printed circuit board in order to protect the board's components.
1SC0450x2 Single-Channel Gate Driver Core for Blocking Voltages up to 4.5 kV and 6.5 kV
1SC2060P Single-Channel SCALE-2 Gate Driver Core for Blocking Voltages up to 1700 V
1SP0340 Single-Channel SCALE-2 Plug-and-Play Gate Driver for 4.5 kV IGBT Modules in a Low-Voltage (6 kV) Package
2SC0106T Dual-Channel SCALE-2+ Gate Driver Core for 1200 V IGBTs
2SC0108T Ultra-Compact Dual-Channel SCALE-2+ Gate Driver Core for up to 1700 V IGBTs
2SC0115T Dual-Channel SCALE-2+ Gate Driver Core for Blocking Voltages up to 1200 V
2SC0435T Dual-Channel SCALE-2+ Gate Driver Core for Blocking Voltages up to 1700 V
2SC0535T Dual-Channel SCALE-2 Gate Driver for 1.7 kV to 3.3 kV IGBTs and SiC MOSFETs
2SC0650P Dual-Channel SCALE-2 Driver Core for Blocking Voltages up to 1700 V
2SD300C17 Dual-Channel SCALE-2+ Gate Driver Core for Blocking Voltages up to 1700 V
2SP0115T Dual-Channel SCALE-2 Plug-and-Play Gate Driver for Blocking Voltages up to 1700 V
2SP0320 Dual-Channel SCALE-2 Plug-and-Play Gate Driver for PrimePACK™ and Equivalent IGBT Modules with Electrical or Fiberoptic Interfaces
ISO5125I DC-DC Converter for 3.3 kV to 6.5 kV SCALE-2 Plug-and-Play Gate Drivers
SCALE EV (2SP0215F2Q0C) Plug-and-Play Gate Driver Boards for Infineon™ EconoDUAL™ Dual IGBT Module
Full Galvanic Reinforced Isolation Gate Driver for 1700 V and 3300 V High-Power Dual IGBT Modules
SiC MOSFET Gate Driver Cores (600 V – 3300 V) with variable gate voltage by VEE circuit (0 V – 25 V, 0 V – 10 V)
SID1102K SCALE-iDriver Single-Channel 5 A IGBT and SiC MOSFET Gate Driver
SID11x1K SCALE-iDriver Single-Channel IGBT / SiC MOSFET Gate Driver
SID11x2K SCALE-iDriver Galvanically-Reinforced Isolated Single-Channel Gate Driver IC
隔离电压为3.3kV至6.5kV的单通道即插即用型门极驱动器(1SP0335和DC-DC ISO5125I)
适用于4500V压接式IGBT/IEGT的单通道即插即用型门极驱动器
高度集成的单通道门极驱动器解决方案,适用于耐压在3300V以内的功率模块
耐压在3300V以内的单通道即插即用型门极驱动器
耐压在1700V以内的双通道即插即用型IGBT门极驱动器
适用于1700V以内半桥功率模块的绝缘主控制(IMC)和模块适配型门极驱动器(MAG)
适用于3300V以内功率模块的即用型门极驱动器
加强绝缘的隔离型单通道门极驱动器IC
可提供加强绝缘的单通道IGBT/MOSFET门极驱动器,汽车专用AEC-Q100合格
适合碳化硅(SiC)开关的极高效率(8A)驱动器